The COPRA DN200 CF are designed to be used for Research and Development in the field of Plasma Surface Science on small substrates of up to 3" wafer size. High plasma densities in combination with dissociation degrees of up to 90% enable accurate activation/cleaning and etching as also post oxidation/nitridation of PVD processes. Those sources are also enabling basic PECVD processes. They are suitable for UHV requirements. The result achieved by the COPRA DN200CF are transferable on larger substrate dimensions by using the COPRA plasma sources for larger substrate sizes.