The COPRA DN501 CF are flange mounted round RF-ICP source solutions for wafer sizes of up to 12". As the COPRA DN401 CF series they enable highly competitive etching and oxidation/nitridation processes and can be used with any type of gas. These sources are nowadays enabling benchmarking post oxidation/nitridation of metallized films. They are customizable to be used in reactive etching processes requiring damage preventing low ion energy inputs paired with excellent ion current densities. These COPRA DN501 CF solutions handle tight semiconductor specific requirements.